NoMIS Power Expands Medium-Voltage SiC MOSFET Portfolio with New 3.3 kV and 1.7 kV Devices

These releases underscore NoMIS Power's continued expansion toward higher-voltage and higher-current SiC devices and mark NoMIS' first 1.7 kV SiC MOSFET offering, with high-resistance small-die ...
Business Wire

Toshiba Develops SiC MOSFET with Embedded Schottky Barrier Diode that Delivers Low On-Resistance and High Reliability

KAWASAKI, Japan--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation and Toshiba Corporation (collectively “Toshiba”) have developed an SiC metal oxide semiconductor field effect ...
EDN

Studies on SiC Power MOSFETs Reliability from the Ohio State University

When it comes to reliability research on SiC power devices, The Ohio State University (OSU) has been at the vanguard. Several aspects of the SiC power MOSFET reliability, including threshold voltage ...
Business Wire

Mitsubishi Electric to Ship Samples of SiC-MOSFET Bare Die for xEVs

TOKYO--(BUSINESS WIRE)--Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it will begin shipping samples of a silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor ...
Nasdaq

Navitas Redefines Reliability with Industry’s First Automotive ‘AEC-Plus’ Qualified SiC MOSFETs in HV-T2Pak Top-Side Cooled Package

TORRANCE, Calif., May 05, 2025 (GLOBE NEWSWIRE) -- Navitas Semiconductor (Nasdaq: NVTS), the only pure-play, next-generation power semiconductor company and industry leader in gallium nitride (GaN) ...
Electronic Design

New Power Module Integrates SiC MOSFETs and IGBTs to Cut EV Costs

Silicon carbide (SiC) continues to carve out a place for itself in power electronics after decades of dominance by silicon. SiC-based power switches are becoming the gold standard in the three-phase ...
Semiconductor Engineering

Driving Toward More Rugged, Less Expensive SiC

Silicon carbide is gaining traction in the power semiconductor market, particularly in electrified vehicles, but it’s still too expensive for many applications. The reasons are well understood, but ...
Electronic Design

Exploiting SiC MOSFETs to Power EV Innovation

Advances in EV technology to make them more practical. How SiC MOSFETs will help meet the current challenges in the EV arena. The all-important high switching speeds of SiC MOSFETs. Silicon-carbide ...
Just Auto

Toyota’s new Chinese BEV integrates ROHM SiC MOSFET

ROHM is advancing 4th-gen SiC MOSFETs while prepping for future tech. Credit: RidhamSupriyanto/Shutterstock. ROHM’s 4th generation silicon carbide (SiC) metal-oxide ...
Electronics Weekly

PCIM: 2kV SiC mosfets from Infineon

Infineon has announced 2kV silicon carbide mosfets and diodes for use in high-power inverters with 1.5kV dc links. “Increasing demand for high power density is pushing developers to adopt 1,500V dc ...